DETERMINATION OF SILICON-SILICON DIOXIDE INTERFACE STATE PROPERTIES FROM ADMITTANCE MEASUREMENTS UNDER ILLUMINATION

被引：71

作者：

KAR, S ^{[1
]}

VARMA, S ^{[1
]}

机构：

[1] INDIAN INST TECHNOL,ADV CTR MAT SCI,KANPUR 208016,UTTAR PRADESH,INDIA

来源：

JOURNAL OF APPLIED PHYSICS | 1985年 / 58卷 / 11期

关键词：

D O I：

10.1063/1.335561

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：4256 / 4266

页数：11

共 10 条

[1] OPTICALLY INDUCED ELECTRON-SPIN RESONANCE AND SPIN-DEPENDENT RECOMBINATION IN SI/SIO2 [J].

HENDERSON, B .

APPLIED PHYSICS LETTERS, 1984, 44 (02) :228-230

[2] OPTICALLY-ACTIVE INTERFACE STATES IN MOS STRUCTURES [J].

KAMIENIECKI, E ;

NITECKI, R ;

SWIATEK, A .

SOLID-STATE ELECTRONICS, 1980, 23 (01) :79-85

[3] DETERMINATION OF SEMICONDUCTOR QUASI-FERMI LEVEL SEPARATION UNDER ILLUMINATION [J].

KAR, S ;

VARMA, S .

JOURNAL OF APPLIED PHYSICS, 1983, 54 (04) :1988-1990

[4] INTERFACE INVESTIGATION USING TRANSPARENT CONDUCTOR-OXIDE-SILICON STRUCTURES [J].

KAR, S ;

VARMA, S ;

SARASWAT, P ;

ASHOK, S .

JOURNAL OF APPLIED PHYSICS, 1982, 53 (10) :7039-7043

[5] SI-SIO2 INTERFACE - ELECTRICAL PROPERTIES AS DETERMINED BY METAL-INSULATOR-SILICON CONDUCTANCE TECHNIQUE [J].

NICOLLIA.EH ;

GOETZBER.A .

BELL SYSTEM TECHNICAL JOURNAL, 1967, 46 (06) :1055-+

[6] ELECTRONIC TRAPS AND PB CENTERS AT THE SI/SIO2 INTERFACE - BAND-GAP ENERGY-DISTRIBUTION [J].

POINDEXTER, EH ;

GERARDI, GJ ;

RUECKEL, ME ;

CAPLAN, PJ ;

JOHNSON, NM ;

BIEGELSEN, DK .

JOURNAL OF APPLIED PHYSICS, 1984, 56 (10) :2844-2849

[7] ENERGY AND ELECTRIC-FIELD DEPENDENCE OF SI-SIO2 INTERFACE STATE PARAMETERS BY OPTICALLY ACTIVATED ADMITTANCE EXPERIMENTS [J].

POON, TC ;

CARD, HC .

JOURNAL OF APPLIED PHYSICS, 1980, 51 (12) :6273-6278

[8]

ROSENCHER E, 1980, P INT TOPICAL C PHYS, P331

[9] THEORY OF CONTINUOUSLY DISTRIBUTED TRAP STATES AT SI-SIO2 INTERFACES [J].

SAKURAI, T ;

SUGANO, T .

JOURNAL OF APPLIED PHYSICS, 1981, 52 (04) :2889-2896

[10]

Varma S., UNPUB

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