REACTIVE ION ETCHING OF GAAS, ALGAAS, AND GASB IN CL2 AND SICL4

被引：55
作者：
PEARTON, SJ
CHAKRABARTI, UK
HOBSON, WS
KINSELLA, AP
机构：
来源：
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1990年 / 8卷 / 04期
关键词：
D O I：
10.1116/1.585027
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
收藏
页码：607 / 617
页数：11
相关论文
共 50 条
[21]   REACTIVE ION ETCHING OF GAAS THROUGH WAFER VIA HOLES USING CL-2 AND SICL4 GASES - A COMPREHENSIVE STATISTICAL APPROACH [J].
CAMACHO, A ;
MORGAN, DV .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1994, 12 (05) :2933-2940
[22]   RIDGE FORMATION FOR ALGAAS GRINSCH LASERS BY CL2 REACTIVE ION ETCHING [J].
JOST, M ;
BONA, GL ;
BUCHMANN, P ;
SASSO, G ;
VETTIGER, P ;
WEBB, D .
IEEE PHOTONICS TECHNOLOGY LETTERS, 1990, 2 (10) :697-698
[23]   CHARACTERIZATION OF A REACTIVE ION ETCHING PROCESS WITH HIGHLY CONTROLLABLE SELECTIVITY FOR ETCHING GAAS/ALGAAS HETEROSTRUCTURES USING MIXTURES OF SICL4 AND FLUORINE-CONTAINING GASES [J].
SALIMIAN, M ;
COOPER, CB .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1987, 134 (09) :C580-C580
[24]   REACTIVE ION ETCHING OF ALINGAP AND GAAS IN SICL4/CH4/AR-BASED PLASMAS [J].
CHANG, CVJM ;
RIJPERS, JCN .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1994, 12 (02) :536-539
[25]   FABRICATION OF GAAS ULTRAFINE GRATINGS BY SINGLE-LAYER-MASKED SICL4 REACTIVE ION ETCHING [J].
LI, GP ;
GUO, L ;
KATOH, T ;
NAGAMUNE, Y ;
FUKATSU, S ;
SHIRAKI, Y ;
ITO, R .
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1990, 29 (07) :L1213-L1216
[26]   Reactive ion etching of copper films in SiCl4 and N2 mixture [J].
Ohno, Kazuhide ;
Sato, Masaaki ;
Arita, Yoshinobu .
Japanese Journal of Applied Physics, Part 2: Letters, 1989, 28 (06)
[27]   REACTIVE ION ETCHING OF GAINP/GAAS MULTILAYER STRUCTURES WITH SICL4-CL-2-AR PLASMA [J].
SAINTCRICQ, B ;
SADEGHI, A ;
RUDRA, A ;
ILEGEMS, M .
MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 1994, 28 (1-3) :365-368
[28]   SELECTIVE DRY ETCHING OF GAAS OVER ALGAAS IN SF6/SICL4 MIXTURES [J].
SALIMIAN, S ;
COOPER, CB .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1988, 6 (06) :1641-1644
[29]   GAAS RADICAL ETCHING WITH A CL2 PLASMA IN A REACTIVE ION-BEAM ETCHING SYSTEM [J].
SUGATA, S ;
ASAKAWA, K .
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1984, 23 (08) :L564-L566
[30]   REACTIVE ION ETCHING INDUCED DAMAGE IN GAAS AND AL0.3GA0.7AS USING SICL4 [J].
CHEUNG, R ;
THOMS, S ;
WATT, M ;
FOAD, MA ;
SOTOMAYORTORRES, CM ;
WILKINSON, CDW ;
COX, UJ ;
COWLEY, RA ;
DUNSCOMBE, C ;
WILLIAMS, RH .
SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 1992, 7 (09) :1189-1198
12345