REACTIVE ION ETCHING OF GAAS, ALGAAS, AND GASB IN CL2 AND SICL4

被引：55
作者：
PEARTON, SJ
CHAKRABARTI, UK
HOBSON, WS
KINSELLA, AP
机构：
来源：
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1990年 / 8卷 / 04期
关键词：
D O I：
10.1116/1.585027
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
收藏
页码：607 / 617
页数：11
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