REACTIVE ION ETCHING OF GAAS, ALGAAS, AND GASB IN CL2 AND SICL4

被引：55

作者：

PEARTON, SJ

CHAKRABARTI, UK

HOBSON, WS

KINSELLA, AP

机构：

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1990年 / 8卷 / 04期

关键词：

D O I：

10.1116/1.585027

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：607 / 617

页数：11

共 42 条

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