LOW-ENERGY ION-BEAM POST HYDROGENATION OF PHOSPHOR IMPLANTED AMORPHOUS-SILICON FILMS

被引：5
|
作者：
GALLONI, R
RUTH, M
DESALVO, A
TSUO, YS
机构：
[1] UNIV BOLOGNA,FAC INGN,DIPARTIMENTO CHIM APPL & SCI MAT,I-40136 BOLOGNA,ITALY
[2] SOLAR ENERGY RES INST,GOLDEN,CO 80401
来源：
PHYSICA B | 1991年 / 170卷 / 1-4期
关键词：
D O I：
10.1016/0921-4526(91)90137-4
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
Glow-discharge-deposited intrinsic hydrogenated amorphous silicon films have been doped by P+ implantation in varying doses between 10(16) and 2 x 10(21) atoms/cm3 and annealed at 260-degrees-C. Subsequent hydrogenation of the samples produces a decrease in conductivity explained by a hydrogen-induced decrease of the electrically active fraction of the dopant.
引用
收藏
页码：273 / 276
页数：4
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