LOW-ENERGY ION-BEAM POST HYDROGENATION OF PHOSPHOR IMPLANTED AMORPHOUS-SILICON FILMS

被引：5
|
作者：
GALLONI, R
RUTH, M
DESALVO, A
TSUO, YS
机构：
[1] UNIV BOLOGNA,FAC INGN,DIPARTIMENTO CHIM APPL & SCI MAT,I-40136 BOLOGNA,ITALY
[2] SOLAR ENERGY RES INST,GOLDEN,CO 80401
来源：
PHYSICA B | 1991年 / 170卷 / 1-4期
关键词：
D O I：
10.1016/0921-4526(91)90137-4
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
Glow-discharge-deposited intrinsic hydrogenated amorphous silicon films have been doped by P+ implantation in varying doses between 10(16) and 2 x 10(21) atoms/cm3 and annealed at 260-degrees-C. Subsequent hydrogenation of the samples produces a decrease in conductivity explained by a hydrogen-induced decrease of the electrically active fraction of the dopant.
引用
收藏
页码：273 / 276
页数：4
相关论文
共 50 条
  • [1] ION-BEAM HYDROGENATION OF AMORPHOUS-SILICON
    TSUO, YS
    SMITH, EB
    DENG, XJ
    XU, Y
    DEB, SK
    SOLAR CELLS, 1988, 24 (3-4): : 249 - 256
  • [2] ION-BEAM HYDROGENATION OF AMORPHOUS-SILICON
    TSUO, YS
    SMITH, EB
    DEB, SK
    APPLIED PHYSICS LETTERS, 1987, 51 (18) : 1436 - 1438
  • [3] RECENT RESULTS ON ION-BEAM HYDROGENATION OF AMORPHOUS-SILICON
    TSUO, YS
    XU, Y
    MASCARENHAS, A
    DEB, SK
    CONFERENCE RECORD OF THE TWENTIETH IEEE PHOTOVOLTAIC SPECIALISTS CONFERENCE - 1988, VOLS 1-2, 1988, : 119 - 122
  • [4] ION-BEAM DEPOSITION OF HYDROGENATED AMORPHOUS-SILICON FILMS
    KASDAN, A
    GOSHORN, DP
    LANFORD, WA
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1982, 20 (03): : 305 - 306
  • [5] ION-BEAM PROFILING OF GETTERED OXYGEN IN AMORPHOUS-SILICON FILMS
    MONAHAN, KM
    MCNAB, TK
    BARDIN, TT
    CROWLEY, JL
    JONATH, AD
    MACMILLAN, HF
    SOLAR ENERGY MATERIALS, 1981, 5 (02): : 199 - 203
  • [6] PREPARATION OF HYDROGENATED AMORPHOUS-SILICON FILMS BY ION-BEAM SPUTTERING
    SARAIE, J
    KOBAYASHI, M
    FUJII, Y
    MATSUNAMI, H
    THIN SOLID FILMS, 1981, 80 (1-3) : 169 - 176
  • [7] LOW-ENERGY ION-BEAM OXIDATION OF SILICON
    TODOROV, SS
    SHILLINGER, SL
    FOSSUM, ER
    IEEE ELECTRON DEVICE LETTERS, 1986, 7 (08) : 468 - 470
  • [8] ION-BEAM ANALYSIS OF AMORPHOUS-SILICON FILMS PRODUCED BY MAGNETRON SPUTTERING
    TUROS, A
    FREY, H
    MEYER, O
    MULLER, W
    PIRRUNG, JM
    PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1984, 83 (02): : 437 - 443
  • [9] LOW-ENERGY ION-BEAM OXIDATION OF SILICON AND GERMANIUM
    HERBOTS, N
    HELLMAN, OC
    CULLEN, PA
    APPLETON, WR
    PENNYCOOK, SJ
    NOGGLE, TS
    ZUHR, RA
    JOURNAL OF ELECTRONIC MATERIALS, 1988, 17 (04) : S27 - S27
  • [10] PHOSPHORUS DOPING FOR HYDROGENATED AMORPHOUS-SILICON FILMS BY A LOW-ENERGY ION DOPING TECHNIQUE
    YOSHIDA, A
    SETSUNE, K
    HIRAO, T
    APPLIED PHYSICS LETTERS, 1987, 51 (04) : 253 - 255
12345