THE EFFECT OF METALLIC CONTAMINATION ON ENHANCED OXYGEN DIFFUSION IN SILICON AT LOW-TEMPERATURES

被引：23
作者：
NEWMAN, RC
TIPPING, AK
TUCKER, JH
机构：
来源：
JOURNAL OF PHYSICS C-SOLID STATE PHYSICS | 1985年 / 18卷 / 27期
关键词：
D O I：
10.1088/0022-3719/18/27/004
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
引用
收藏
页码：L861 / L866
页数：6
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