MICRO-RAMAN SPECTROSCOPY FOR CHARACTERIZATION OF SEMICONDUCTOR-DEVICES

被引：34

作者：

ABSTREITER, G

机构：

[1] Walter Schottky Institut, Technische Universität München

来源：

APPLIED SURFACE SCIENCE | 1991年 / 50卷 / 1-4期

关键词：

D O I：

10.1016/0169-4332(91)90141-6

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

Selected examples of the usefulness of micro-Raman spectroscopy for the analysis of semiconductor devices are discussed. This includes the determination of local temperatures in devices under operational conditions, built-in strain in processed silicon, and local crystal orientation.

引用

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页码：73 / 78

页数：6

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