EXCITED-STATES OF ACCEPTORS IN CDTE AND ZNTE

被引：13

作者：

SAID, M ^{[1
]}

KANEHISA, MA ^{[1
]}

机构：

[1] UNIV PARIS 06,PHYS SOLIDES LAB,F-75252 PARIS 05,FRANCE

来源：

JOURNAL OF CRYSTAL GROWTH | 1990年 / 101卷 / 1-4期

关键词：

Band Structure - Copper and Alloys - Mathematical Techniques - Finite Element Method - Semiconducting Zinc Compounds - Silver and Alloys;

D O I：

10.1016/0022-0248(90)91021-H

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

Higher excited states of acceptors in CdTe and ZnTe are obtained by using the Baldereschi and Lipari spherical model including the cubic correction and the central-cell effect. This is done by solving the coupled radial equations by the finite-element method with Arnoldi's algorithm, which gives several (≅20) low-lying states simultaneously. Our procedure allows one to determine very accurately the host band-structure parameters. In the case of CdTe we obtain the Luttinger parameters γ1 = 5.30, γ2 = 1.62, γ3 = 2.10 and the dielectric constant ε{lunate}0 = 9.3. For ZnTe we obtain γ1 = 3.80, γ2 = 0.86, γ3 = 1.32 and ε{lunate}0 = 9.4. © 1989.

引用

页码：488 / 492

页数：5

共 21 条

[1] CUBIC CONTRIBUTIONS TO SPHERICAL MODEL OF SHALLOW ACCEPTOR STATES [J].