NEGATIVE CHARGE, BARRIER HEIGHTS, AND THE CONDUCTION-BAND DISCONTINUITY IN ALXGA1-XAS CAPACITORS

被引：130

作者：

HICKMOTT, TW

SOLOMON, PM

FISCHER, R

MORKOC, H

机构：

[1] UNIV ILLINOIS,DEPT ELECT ENGN,URBANA,IL 61801

[2] UNIV ILLINOIS,COORDINATED SCI LAB,URBANA,IL 61801

来源：

JOURNAL OF APPLIED PHYSICS | 1985年 / 57卷 / 08期

关键词：

D O I：

10.1063/1.335221

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

收藏

页码：2844 / 2853

页数：10

相关论文

共 31 条

[1] HEAVILY DOPED SEMICONDUCTORS AND DEVICES
ABRAM, RA
REES, GJ
WILSON, BLH
[J]. ADVANCES IN PHYSICS, 1978, 27 (06) : 799 - 892
[2] EXPERIMENTS ON GE-GAAS HETEROJUNCTIONS
ANDERSON, RL
[J]. SOLID-STATE ELECTRONICS, 1962, 5 (SEP-O) : 341 - &
[3] SEMICONDUCTING AND OTHER MAJOR PROPERTIES OF GALLIUM-ARSENIDE
BLAKEMORE, JS
[J]. JOURNAL OF APPLIED PHYSICS, 1982, 53 (10) : R123 - R181
[4] CASEY HC, 1978, HETEROSTRUCTURE LA A
[5] RICHARDSON CONSTANT FOR THERMIONIC EMISSION IN SCHOTTKY BARRIER DIODES
CROWELL, CR
[J]. SOLID-STATE ELECTRONICS, 1965, 8 (04) : 395 - &
[6] QUANTUM STATES OF CONFINED CARRIERS IN VERY THIN ALXGA1-XAS-GAAS-ALXGA1-XAS HETEROSTRUCTURES
DINGLE, R
WIEGMANN, W
HENRY, CH
[J]. PHYSICAL REVIEW LETTERS, 1974, 33 (14) : 827 - 830
[7] Dingle R, 1975, FESTKORPERPROBLEME, V15, P21
[8] MOLECULAR-BEAM EPITAXY GROWTH OF (AL,GA) AS GAAS HETEROSTRUCTURES
DRUMMOND, TJ
MORKOC, H
CHO, AY
[J]. JOURNAL OF CRYSTAL GROWTH, 1982, 56 (02) : 449 - 454
[9] MOLECULAR-BEAM EPITAXIAL-GROWTH AND ELECTRICAL TRANSPORT OF GRADED BARRIERS FOR NON-LINEAR CURRENT CONDUCTION
GOSSARD, AC
BROWN, W
ALLYN, CL
WEIGMANN, W
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1982, 20 (03): : 694 - 700
[10] RESONANT FOWLER-NORDHEIM TUNNELING IN N-GAAS-UNDOPED ALXGA1-XAS-N+GAAS CAPACITORS
HICKMOTT, TW
SOLOMON, PM
FISCHER, R
MORKOC, H
[J]. APPLIED PHYSICS LETTERS, 1984, 44 (01) : 90 - 92

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