SHALLOW JUNCTION FORMATION WITH BORON FLUORIDE AND LOW-ENERGY BORON ION-IMPLANTATION INTO SILICON

被引：0
|
作者：
LU, ZH
ZHANG, CM
LI, SJ
LUO, Y
ZHANG, HX
机构：
来源：
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS | 1989年 / 43卷 / 01期
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D O I：
10.1016/0168-583X(89)90078-5
中图分类号：
TH7 [仪器、仪表];
学科分类号：
0804 ; 080401 ; 081102 ;
摘要：
引用
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页码：46 / 49
页数：4
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