PHOTOLUMINESCENCE OF ALXGA1-XAS/GAAS QUANTUM WELL HETEROSTRUCTURES GROWN BY MOLECULAR-BEAM EPITAXY .1. LUMINESCENCE OF THE CONSTITUENT ALXGA1-XAS BARRIER AND GAAS WELL MATERIAL

被引:20
作者
JUNG, H
FISCHER, A
PLOOG, K
机构
来源
APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING | 1984年 / 33卷 / 01期
关键词
D O I
10.1007/BF01197079
中图分类号
T [工业技术];
学科分类号
08 ;
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页码:9 / 17
页数:9
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