EPITAXIAL-GROWTH OF UNDOPED AND MG-DOPED GAN

被引：56

作者：

SANO, M ^{[1
]}

AOKI, M ^{[1
]}

机构：

[1] UNIV TOKYO,FAC ENGN,DEPT ELECTR ENGN,TOKYO 113,JAPAN

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS | 1976年 / 15卷 / 10期

关键词：

D O I：

10.1143/JJAP.15.1943

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：1943 / 1950

页数：8

共 15 条

[1] MASS SPECTROMETRIC STUDIES OF VAPOR-PHASE CRYSTAL GROWTH .2. GAN [J].

BAN, VS .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1972, 119 (06) :761-&

[2] CRYSTAL-GROWTH AND CHARACTERIZATION OF GALLIUM NITRIDE [J].

CHU, TL ;

ITO, K ;

SMELTZER, RK ;

CHU, SSC .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1974, 121 (01) :159-162

[3]

HONIG RE, 1969, RCA REV, V30, P285

[4] ELECTRICAL PROPERTIES OF NORMAL TYPE VAPOR-GROWN GALLIUM NITRIDE [J].

ILEGEMS, M ;

MONTGOME.HC .

JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1973, 34 (05) :885-895

[5]

Ilegems M.J., 1972, J CRYSTAL GROWTH, V13, P360

[6] PREPARATION AND STRUCTURAL PROPERTIES OF GAN THIN FILMS [J].

KOSICKI, BB ;

KAHNG, D .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1969, 6 (04) :593-&

[7] USE OF METALORGANICS IN PREPARATION OF SEMICONDUCTOR MATERIALS .4. NITRIDES OF ALUMINUM AND GALLIUM [J].

MANASEVIT, HM ;

ERDMANN, FM ;

SIMPSON, WI .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1971, 118 (11) :1864-+

[8] MICROSTRUCTURAL OBSERVATIONS ON GALLIUM NITRIDE LIGHT-EMITTING DIODES [J].

MARUSKA, HP ;

ANDERSON, LJ ;

STEVENSON, DA .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1974, 121 (09) :1202-1207

[9] VIOLET LUMINESCENCE OF MG-DOPED GAN [J].

MARUSKA, HP ;

STEVENSON, DA ;

PANKOVE, JI .

APPLIED PHYSICS LETTERS, 1973, 22 (06) :303-305

[10] PREPARATION AND PROPERTIES OF VAPOR-DEPOSITED SINGLE-CRYSTALLINE GAN [J].

MARUSKA, HP ;

TIETJEN, JJ .

APPLIED PHYSICS LETTERS, 1969, 15 (10) :327-&

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