INFLUENCE OF AN ELECTRIC-FIELD ON PHOTOIONIZATION OF DEEP CENTERS AS A RESULT OF ELECTRONIC-VIBRATIONAL TRANSITIONS

被引：0

作者：

BAKALEINIKOV, LA ^{[1
]}

BULYARSKII, SV ^{[1
]}

GRUSHKO, NS ^{[1
]}

GUTKIN, AA ^{[1
]}

机构：

[1] AF IOFFE ENGN PHYS INST,LENINGRAD,USSR

来源：

SOVIET PHYSICS SEMICONDUCTORS-USSR | 1976年 / 10卷 / 02期

关键词：

D O I：

暂无

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

引用

页码：216 / 217

页数：2

共 12 条

[1] BUDYANSK.VI, 1974, SOV PHYS SEMICOND+, V7, P869
[2] BULYARSKII SV, 1975, SOV PHYS SEMICOND+, V9, P187
[3] ELECTRIC-FIELD-INDUCED INFRARED ABSORPTION IN GAAS P-N JUNCTIONS
BURGIEL, JC
[J]. APPLIED PHYSICS LETTERS, 1966, 9 (11) : 389 - &
[4] ELECTROABSORPTION BY SUBSTITUTIONAL COPPER IMPURITIES IN GAAS
BURGIEL, JC
BRAUN, HJ
[J]. JOURNAL OF APPLIED PHYSICS, 1969, 40 (06) : 2583 - &
[5] FANBANYAN VB, 1973, SOV PHYS-SOLID STATE, V14, P3000
[6] GRUSHKO NS, 1975, SOV PHYS SEMICOND+, V8, P1179
[7] GUTKIN AA, 1974, SOV PHYS SEMICOND+, V7, P867
[8] GUTKIN AA, 1974, SOV PHYS SEMICOND+, V8, P298
[9] PHOTOCAPACITANCE STUDIES OF OXYGEN DONOR IN GAP I OPTICAL CROSS-SECTIONS, ENERGY-LEVELS, AND CONCENTRATION
KUKIMOTO, H
HENRY, CH
MERRITT, FR
[J]. PHYSICAL REVIEW B, 1973, 7 (06) : 2486 - 2499
[10] IMPURITY ELECTROABSORPTION OF GAAS
NISHINO, T
YANAGIDA, T
HAMAKAWA, Y
[J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 1972, 11 (08) : 1221 - &