ELECTROLUMINESCENCE USING GAAS MIS STRUCTURES

[1] ELECTROLUMINESCENCE USING GAAS MIS STRUCTURES [J]. APPLIED PHYSICS LETTERS, 1966, 9 (12) : 441 - &

[2] BERGLUND CN, PERSONAL COMMUNICATI

[3] EFFECT OF DISLOCATIONS ON BREAKDOWN IN SILICON P-N JUNCTIONS [J]. JOURNAL OF APPLIED PHYSICS, 1958, 29 (07) : 1103 - 1110

[4] INVESTIGATION OF THERMALLY OXIDISED SILICON SURFACES USING METAL-OXIDE-SEMICONDUCTOR STRUCTURES [J]. SOLID-STATE ELECTRONICS, 1965, 8 (02) : 145 - +

[5] HAITZ RH, 1960, J APPL PHYS, V31, P1821

[6] CARRIER CONCENTRATION AND MINORITY CARRIER LIFETIME MEASUREMENT IN SEMICONDUCTOR EPITAXIAL LAYERS BY MOS CAPACITANCE METHOD [J]. SOLID-STATE ELECTRONICS, 1966, 9 (04) : 315 - &

[7] AVALANCHE BREAKDOWN VOLTAGES OF ABRUPT AND LINEARLY GRADED P-N JUNCTIONS IN GE SI GAAS AND GAP - (DOPANT EFFECTS IMPURITY EFFECTS T) [J]. APPLIED PHYSICS LETTERS, 1966, 8 (05) : 111 - &

[8] ZERBST M, 1965, Z ANGEW PHYSIK, V19, P85

[1] ELECTROLUMINESCENCE USING GAAS MIS STRUCTURES [J]. APPLIED PHYSICS LETTERS, 1966, 9 (12) : 441 - &

[2] BERGLUND CN, PERSONAL COMMUNICATI

[3] EFFECT OF DISLOCATIONS ON BREAKDOWN IN SILICON P-N JUNCTIONS [J]. JOURNAL OF APPLIED PHYSICS, 1958, 29 (07) : 1103 - 1110

[4] INVESTIGATION OF THERMALLY OXIDISED SILICON SURFACES USING METAL-OXIDE-SEMICONDUCTOR STRUCTURES [J]. SOLID-STATE ELECTRONICS, 1965, 8 (02) : 145 - +

[5] HAITZ RH, 1960, J APPL PHYS, V31, P1821

[6] CARRIER CONCENTRATION AND MINORITY CARRIER LIFETIME MEASUREMENT IN SEMICONDUCTOR EPITAXIAL LAYERS BY MOS CAPACITANCE METHOD [J]. SOLID-STATE ELECTRONICS, 1966, 9 (04) : 315 - &

[7] AVALANCHE BREAKDOWN VOLTAGES OF ABRUPT AND LINEARLY GRADED P-N JUNCTIONS IN GE SI GAAS AND GAP - (DOPANT EFFECTS IMPURITY EFFECTS T) [J]. APPLIED PHYSICS LETTERS, 1966, 8 (05) : 111 - &

[8] ZERBST M, 1965, Z ANGEW PHYSIK, V19, P85