SILICON THIN-FILM FORMATION BY DIRECT PHOTOCHEMICAL DECOMPOSITION OF DISILANE

被引：63

作者：

MISHIMA, Y ^{[1
]}

HIROSE, M ^{[1
]}

OSAKA, Y ^{[1
]}

NAGAMINE, K ^{[1
]}

ASHIDA, Y ^{[1
]}

KITAGAWA, N ^{[1
]}

ISOGAYA, K ^{[1
]}

机构：

[1] MITSUI TOATSU CHEM INC, DEPT CORP DEV, TOKYO 100, JAPAN

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS | 1983年 / 22卷 / 01期

关键词：

D O I：

10.1143/JJAP.22.L46

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：L46 / L48

页数：3

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[7] PHOTOCHEMISTRY OF SILICON-COMPOUNDS .4. MERCURY PHOTOSENSITIZATION OF DISILANE [J].

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