ELECTRICAL AND STRUCTURAL-PROPERTIES OF PULSE LASER-ANNEALED POLYCRYSTALLINE SILICON FILMS

被引：6

作者：

COX, TI

DESHMUKH, VGI

HILL, JR

WEBBER, HC

CHEW, NG

CULLIS, AG

机构：

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1983年 / 30卷 / 07期

关键词：

D O I：

10.1109/T-ED.1983.21203

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：737 / 744

页数：8

共 15 条

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[2]

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[4] MEASUREMENT OF THE VELOCITY OF THE CRYSTAL-LIQUID INTERFACE IN PULSED LASER ANNEALING OF SI [J].

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[5] A COMPUTER-MODEL FOR PULSED LASER-HEATING OF DEVICE STRUCTURES [J].

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[6]

Hill C., 1982, Laser and Electron Beam Interactions with Solids. Proceedings of the Materials Research Society Annual Meeting, P579

[7]

HILL C, 1982, LASER ELECTRON BEAM, P361

[8] RESISTIVITY OF BULK SILICON AND OF DIFFUSED LAYERS IN SILICON [J].

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[9]

JOUBERT P, 1975, VIDE, V180, P210

[10]

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