DISTRIBUTION OF DOPANT IN SIO2-SI

被引：3

作者：

AVRON, M

SHATZKES, M

BURKHARDT, PJ

CADOFF, I

机构：

[1] IBM CORP,DIV SYST PROD,HOPEWELL JUNCTION,NY 12533

[2] POLYTECH INST BROOKLYN,DEPT MET & MAT SCI,BROOKLYN,NY 11201

来源：

JOURNAL OF APPLIED PHYSICS | 1976年 / 47卷 / 07期

关键词：

D O I：

10.1063/1.323110

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：3159 / 3166

页数：8

共 22 条

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[9] REDISTRIBUTION OF ACCEPTOR + DONOR IMPURITIES DURING THERMAL OXIDATION OF SILICON [J].

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