A voltage-controlled ring oscillator using InP full enhancement-mode HEMT logic

被引：0
|
作者：
Du Rui [1 ]
Dai Yang [1 ]
Chen Yanling [1 ]
Yang Fuhua [1 ]
机构：
[1] Chinese Acad Sci, Inst Semicond, Res Ctr Semicond Integrat, Beijing 100083, Peoples R China
来源：
JOURNAL OF SEMICONDUCTORS | 2009年 / 30卷 / 03期
关键词：
VCO; E-HEMT; InP;
D O I：
10.1088/1674-4926/30/3/035001
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
A voltage-controlled ring oscillator (VCO) based on a full enhancement-mode InAlAs/InGaAs/InP high electron mobility transistor (HEMT) logic is proposed. An enhancement-mode HEMT (E-HEMT) is fabricated, whose threshold is demonstrated to be 10 mV. The model of the E-HEMT is established and used in the SPICE simulation of the VCO. The result proves that the full E-HEMT logic technology can be applied to the VCO. And compared with the HEMT DCFL technology, the complexity of our fabrication process is reduced and the reliability is improved.
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页数：5
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