INFLUENCE OF HEAT-TREATMENT ON SI-SIO2 INTERFACE STATES IN POLY SI-SIO2-SI SYSTEM

被引：0
|
作者：
HASEGAWA, K [1 ]
MORITA, H [1 ]
ENOMOTO, T [1 ]
FUKUWATARI, H [1 ]
机构：
[1] MITSUBISHI ELECT CORP, KITA WORKS, 4-1 MIZUHARA, ITAMI, HYOGO, JAPAN
来源：
JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1974年 / 121卷 / 03期
关键词：
D O I：
暂无
中图分类号：
O646 [电化学、电解、磁化学];
学科分类号：
081704 ;
摘要：
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页码：C89 / C89
页数：1
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