INFLUENCE OF HEAT-TREATMENT ON SI-SIO2 INTERFACE STATES IN POLY SI-SIO2-SI SYSTEM

被引：0

作者：

HASEGAWA, K ^{[1
]}

MORITA, H ^{[1
]}

ENOMOTO, T ^{[1
]}

FUKUWATARI, H ^{[1
]}

机构：

[1] MITSUBISHI ELECT CORP, KITA WORKS, 4-1 MIZUHARA, ITAMI, HYOGO, JAPAN

来源：

关键词：

D O I：

暂无

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

引用

页码：C89 / C89

页数：1

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