DESIGN AND CHARACTERIZATION OF ION-IMPLANTED TRACKS FOR 16 MBIT/CM2 STORAGE DENSITY BUBBLE MEMORY DEVICES

被引:3
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作者
SATO, T
IKEDA, T
SUZUKI, R
机构
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D O I
10.1109/TMAG.1986.1064290
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
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页码:168 / 174
页数:7
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