COMPOSITIONALLY GRADED SEMICONDUCTORS AND THEIR DEVICE APPLICATIONS

被引:32
作者
CAPASSO, F
机构
来源
ANNUAL REVIEW OF MATERIALS SCIENCE | 1986年 / 16卷
关键词
D O I
10.1146/annurev.ms.16.080186.001403
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
引用
收藏
页码:263 / 291
页数:29
相关论文
共 38 条
[1]   NEW RECTIFYING SEMICONDUCTOR STRUCTURE BY MOLECULAR-BEAM EPITAXY [J].
ALLYN, CL ;
GOSSARD, AC ;
WIEGMANN, W .
APPLIED PHYSICS LETTERS, 1980, 36 (05) :373-376
[2]   HIGH-PERFORMANCE AVALANCHE PHOTO-DIODE WITH SEPARATE ABSORPTION GRADING AND MULTIPLICATION REGIONS [J].
CAMPBELL, JC ;
DENTAI, AG ;
HOLDEN, WS ;
KASPER, BL .
ELECTRONICS LETTERS, 1983, 19 (20) :818-820
[3]   ENHANCEMENT OF ELECTRON-IMPACT IONIZATION IN A SUPER-LATTICE - A NEW AVALANCHE PHOTO-DIODE WITH A LARGE IONIZATION RATE RATIO [J].
CAPASSO, F ;
TSANG, WT ;
HUTCHINSON, AL ;
WILLIAMS, GF .
APPLIED PHYSICS LETTERS, 1982, 40 (01) :38-40
[4]   NEW TRANSIENT ELECTRICAL-POLARIZATION PHENOMENON IN SAWTOOTH SUPER-LATTICES [J].
CAPASSO, F ;
LURYI, S ;
TSANG, WT ;
BETHEA, CG ;
LEVINE, BF .
PHYSICAL REVIEW LETTERS, 1983, 51 (25) :2318-2321
[5]   STAIRCASE SOLID-STATE PHOTOMULTIPLIERS AND AVALANCHE PHOTO-DIODES WITH ENHANCED IONIZATION RATES RATIO [J].
CAPASSO, F ;
TSANG, WT ;
WILLIAMS, GF .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1983, 30 (04) :381-390
[6]   LOW-DARK-CURRENT LOW-VOLTAGE 1.3-1.6 MU-M AVALANCHE PHOTODIODE WITH HIGH-LOW ELECTRIC-FIELD PROFILE AND SEPARATE ABSORPTION AND MULTIPLICATION REGIONS BY MOLECULAR-BEAM EPITAXY [J].
CAPASSO, F ;
CHO, AY ;
FOY, PW .
ELECTRONICS LETTERS, 1984, 20 (15) :635-637
[7]   BAND-GAP ENGINEERING VIA GRADED GAP, SUPER-LATTICE, AND PERIODIC DOPING STRUCTURES - APPLICATIONS TO NOVEL PHOTODETECTORS AND OTHER DEVICES [J].
CAPASSO, F .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1983, 1 (02) :457-461
[8]   NEW GRADED BAND-GAP PICOSECOND PHOTO-TRANSISTOR [J].
CAPASSO, F ;
TSANG, WT ;
BETHEA, CG ;
HUTCHINSON, AL ;
LEVINE, BF .
APPLIED PHYSICS LETTERS, 1983, 42 (01) :93-95
[10]  
Capasso F., 1982, International Electron Devices Meeting. Technical Digest, P334