EXPERIMENTAL SINGLE-PARAMETER TEMPERATURE AND MAGNETIC-FIELD CONDUCTANCE FUNCTION

被引:0
|
作者
WHITE, H [1 ]
MCLACHLAN, DS [1 ]
机构
[1] UNIV WITWATERSRAND,CONDENSED MATTER RES GRP,WITS 2050,SOUTH AFRICA
关键词
METAL-SEMICONDUCTOR TRANSITION; 3-DIMENSIONAL DISORDERED-SYSTEMS; AMORPHOUS SI1-XCRX FILMS; SCALING BEHAVIOR; LOCALIZATION; CONDUCTIVITY;
D O I
10.1088/0953-8984/3/28/011
中图分类号
O469 [凝聚态物理学];
学科分类号
070205 ;
摘要
It is shown that the temperature dependent magnetoresistance data of a sample in the weak antilocalization regime lies on a single curve of d In R(B, T)/d In B versus In (R(B, T)/R(O, T)). R(B, T) is the resistivity of the sample, B is the applied magnetic field and T is temperature. This result is consistent with the single-parameter zero temperature scaling theory of conduction. It also suggests that, in the presence of a magnetic field and strong spin-orbit scattering, a single-parameter scaling type function is adequate in describing the resistivity.
引用
收藏
页码:5367 / 5371
页数:5
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