EXPERIMENTAL SINGLE-PARAMETER TEMPERATURE AND MAGNETIC-FIELD CONDUCTANCE FUNCTION

被引：0

作者：

WHITE, H ^{[1
]}

MCLACHLAN, DS ^{[1
]}

机构：

[1] UNIV WITWATERSRAND,CONDENSED MATTER RES GRP,WITS 2050,SOUTH AFRICA

来源：

JOURNAL OF PHYSICS-CONDENSED MATTER | 1991年 / 3卷 / 28期

关键词：

METAL-SEMICONDUCTOR TRANSITION; 3-DIMENSIONAL DISORDERED-SYSTEMS; AMORPHOUS SI1-XCRX FILMS; SCALING BEHAVIOR; LOCALIZATION; CONDUCTIVITY;

D O I：

10.1088/0953-8984/3/28/011

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

It is shown that the temperature dependent magnetoresistance data of a sample in the weak antilocalization regime lies on a single curve of d In R(B, T)/d In B versus In (R(B, T)/R(O, T)). R(B, T) is the resistivity of the sample, B is the applied magnetic field and T is temperature. This result is consistent with the single-parameter zero temperature scaling theory of conduction. It also suggests that, in the presence of a magnetic field and strong spin-orbit scattering, a single-parameter scaling type function is adequate in describing the resistivity.

引用

页码：5367 / 5371

页数：5