THE USE OF RAPID THERMAL ANNEALING IN A SYSTEMATIC ION-IMPLANTATION MONITORING PROCESS

被引：0
|
作者：
YARLING, CB [1 ]
机构：
[1] MOTOROLA,MICARL,MESA,AZ
来源：
SOLID STATE TECHNOLOGY | 1985年 / 28卷 / 05期
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D O I：
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中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
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页码：252 / 254
页数：3
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