INFLUENCE OF PULSED LASER IRRADIATION ON THE PROPERTIES OF IMPLANTED LAYERS OF SILICON-CARBIDE

被引：0
作者：
VIOLIN, EE
VORONKO, ON
NOIBERT, F
POTAPOV, EN
机构：
来源：
SOVIET PHYSICS SEMICONDUCTORS-USSR | 1984年 / 18卷 / 05期
关键词：
D O I：
暂无
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
引用
收藏
页码：596 / 597
页数：2
相关论文
共 50 条
  • [31] DEFECT PRODUCTION AND ANNEALING IN ION-IMPLANTED SILICON-CARBIDE
    HEFT, A
    WENDLER, E
    BACHMAN, T
    GLASER, E
    WESCH, W
    MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 1995, 29 (1-3): : 142 - 146
  • [32] PREPARATION OF SILICON-CARBIDE MICROSTRUCTURES BY THE LASER PYROLISIS
    SALUN, VS
    KANAEV, IF
    SERBINOV, IA
    RESHETNIKOV, IE
    ORMONT, AB
    BYVALIN, DA
    RYABOVA, LA
    MALINOVSKII, VK
    PISMA V ZHURNAL TEKHNICHESKOI FIZIKI, 1987, 13 (13): : 823 - 828
  • [33] DISORDERING OF SILICON-CARBIDE DURING NEUTRON-IRRADIATION
    NIKOLAENKO, VA
    GORDEYEV, VG
    KUZNETSOV, VN
    RADIATION EFFECTS AND DEFECTS IN SOLIDS, 1976, 27 (3-4): : 163 - 165
  • [34] SILICON-CARBIDE FROM LASER PYROLYSIS OF POLYCARBOSILANE
    JAKUBENAS, K
    MARCUS, HL
    JOURNAL OF THE AMERICAN CERAMIC SOCIETY, 1995, 78 (08) : 2263 - 2266
  • [35] INFLUENCE OF DOPING ON THE STRUCTURAL AND OPTOELECTRONIC PROPERTIES OF AMORPHOUS AND MICROCRYSTALLINE SILICON-CARBIDE
    DEMICHELIS, F
    PIRRI, CF
    TRESSO, E
    JOURNAL OF APPLIED PHYSICS, 1992, 72 (04) : 1327 - 1333
  • [36] ANNEALING OF IMPLANTED LAYERS OF SILICON BY PULSED CO2-LASER RADIATION
    GALIAUTDINOV, MF
    DANILEIKO, IK
    ZARIPOV, MM
    MANENKOV, AA
    SIDORIN, AV
    KHAIBULLIN, IB
    SHTYRKOV, EI
    DOKLADY AKADEMII NAUK SSSR, 1981, 257 (05): : 1110 - 1113
  • [37] A RUTHERFORD BACKSCATTERING STUDY OF AR-IMPLANTED AND XE-IMPLANTED SILICON-CARBIDE
    FOHL, A
    EMRICK, RM
    CARSTANJEN, HD
    NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 1992, 65 (1-4) : 335 - 340
  • [38] FORMATION OF SILICON-CARBIDE LAYERS BY THE ION-BEAM TECHNIQUE AND THEIR ELECTRICAL-PROPERTIES
    KIMURA, T
    YUGO, S
    ZHOU, SB
    ADACHI, Y
    NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 1989, 39 (1-4) : 238 - 241
  • [39] INFLUENCE OF OXYGEN ON THE FORMATION OF ALUMINUM SILICON-CARBIDE
    OSCROFT, RJ
    THOMPSON, DP
    JOURNAL OF THE AMERICAN CERAMIC SOCIETY, 1992, 75 (01) : 224 - 226
  • [40] INFLUENCE OF THERMAL SHOCKS ON THE STRENGTH OF SILICON-CARBIDE
    BRANDSTADTER, A
    KOIZLIK, K
    LINKE, J
    SCHIFFERS, H
    WALLURA, E
    NICKEL, H
    JOURNAL OF NUCLEAR MATERIALS, 1991, 179 : 367 - 369
12345