DIFFUSION OF GOLD IN SILICON STUDIED BY MEANS OF NEUTRON-ACTIVATION ANALYSIS AND SPREADING-RESISTANCE MEASUREMENTS

被引:116
作者
STOLWIJK, NA [1 ]
SCHUSTER, B [1 ]
HOLZL, J [1 ]
机构
[1] UNIV STUTTGART,INST THEORET & ANGEW PHYS,D-7000 STUTTGART 80,FED REP GER
来源
APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING | 1984年 / 33卷 / 02期
关键词
D O I
10.1007/BF00617619
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
引用
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页码:133 / 140
页数:8
相关论文
共 20 条
[1]   PROPERTIES OF GOLD IN SILICON [J].
BULLIS, WM .
SOLID-STATE ELECTRONICS, 1966, 9 (02) :143-&
[2]   ELECTRICAL PROPERTIES OF N-TYPE SILICON DOPED WITH GOLD [J].
BULLIS, WM ;
STRIETER, FJ .
JOURNAL OF APPLIED PHYSICS, 1968, 39 (01) :314-&
[3]   PROPERTIES OF GOLD-DOPED SILICON [J].
COLLINS, CB ;
CARLSON, RO ;
GALLAGHER, CJ .
PHYSICAL REVIEW, 1957, 105 (04) :1168-1173
[4]  
Crank J., 1957, MATH DIFFUSION
[5]   MECHANISM OF DIFFUSION OF COPPER IN GERMANIUM [J].
FRANK, FC ;
TURNBULL, D .
PHYSICAL REVIEW, 1956, 104 (03) :617-618
[6]   SELF-INTERSTITIALS AND VACANCIES IN ELEMENTAL SEMICONDUCTORS BETWEEN ABSOLUTE-ZERO AND THE TEMPERATURE OF MELTING [J].
FRANK, W .
FESTKORPERPROBLEME-ADVANCES IN SOLID STATE PHYICS, 1981, 21 :221-242
[7]   MECHANISM AND KINETICS OF THE DIFFUSION OF GOLD IN SILICON [J].
GOSELE, U ;
FRANK, W ;
SEEGER, A .
APPLIED PHYSICS, 1980, 23 (04) :361-368
[8]   SELF-DIFFUSION IN INTRINSIC SILICON [J].
KALINOWSKI, L ;
SEGUIN, R .
APPLIED PHYSICS LETTERS, 1979, 35 (03) :211-213
[9]  
KALINOWSKI L, 1980, APPL PHYS LETT, V36, P171, DOI 10.1063/1.91668
[10]  
LEBLANS LMJ, 1963, PHILIPS TECH REV, V25, P191