PHOTODEGRADATION OF CDXZN1-XSE QUANTUM-WELLS

被引：50

作者：

HAUGEN, GM

GUHA, S

CHENG, H

DEPUYDT, JM

HAASE, MA

HOFLER, GE

QIU, J

WU, BJ

机构：

[1] Photonics Research Laboratory, 3M Company, 3M Center, St. Paul, MN 55144-1000

来源：

APPLIED PHYSICS LETTERS | 1995年 / 66卷 / 03期

关键词：

D O I：

10.1063/1.114212

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Photoluminescence imaging was used to study photodegradation in CdZnSe quantum wells, important to II-VI based blue-green light emitter technology. The observed degradation microstructure evolves similarly to features observed during CdZnSe based LED and laser operation. Degradation is shown to emanate from pre-existing defects to form dark line defects along the 〈100〉 directions. We report an observation of a mobile defect in II-VI materials that is the precursor to the 〈100〉 dark line defects. © 1995 American Institute of Physics.

引用

页码：358 / 360

页数：3

共 7 条

[1] RAMAN MICROPROBE AND MICROSCOPE WITH LASER EXCITATION [J].