2ND SUBBAND POPULATION IN DELTA-DOPED AL0.48IN0.52AS/GA(0.47)IN(0.5)3AS HETEROSTRUCTURES

被引：30
|
作者：
LO, I
MITCHEL, WC
AHOUJJA, M
CHENG, JP
FATHIMULLA, A
MIER, H
机构：
[1] WRIGHT LAB,MAT DIRECTORATE,WRIGHT PATTERSON AFB,OH 45433
[2] MIT,FRANCIS BITTER NATL MAGNET LAB,CAMBRIDGE,MA 02139
来源：
APPLIED PHYSICS LETTERS | 1995年 / 66卷 / 06期
关键词：
D O I：
10.1063/1.114083
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
We have observed the population of the second two-dimensional electron subband in δ-doped Al0.48In0.52As/Ga0.47In0.53As heterostructures by Shubnikov-de Haas measurements. After illuminating the samples at low temperature, the electron density increases from 17.3 to 18.2×1011 cm-2 for the first subband and from 3.6 to 4.1×1011 cm-2 for the second subband. The population of the second subband begins when the first subband is filled at a density of 10.3×1011 cm-2. The effective mass of the second subband is equal to (0.045±0.003)m0, indicating significant band nonparabolicity in the Ga0.47In0.53As well.© 1995 American Institute of Physics.
引用
收藏
页码：754 / 756
页数：3
相关论文
共 50 条
  • [31] DEPENDENCE OF ELECTRON-MOBILITY ON SPACER THICKNESS AND ELECTRON-DENSITY IN MODULATION-DOPED GA0.47IN0.53AS/AL0.48IN0.52AS HETEROJUNCTIONS
    HSIEH, KH
    OHNO, H
    WICKS, G
    EASTMAN, LF
    ELECTRONICS LETTERS, 1983, 19 (05) : 160 - 162
  • [32] SCREENING OF THE N=2 EXCITONIC RESONANCE BY HOT CARRIERS IN AN UNDOPED GA0.47IN0.53AS/AL0.48IN0.52AS MULTIPLE QUANTUM WELL STRUCTURE
    LOBENTANZER, H
    STOLZ, W
    PLOOG, K
    BAUERLE, RJ
    ELSAESSER, T
    SOLID-STATE ELECTRONICS, 1989, 32 (12) : 1875 - 1879
  • [33] Growth of high quality Al0.48In0.52As/Ga0.47In0.53As heterostructures using strain relaxed AlxGayIn1-x-yAs buffer layers on GaAs
    Haupt, M
    Kohler, K
    Ganser, P
    Emminger, S
    Muller, S
    Rothemund, W
    APPLIED PHYSICS LETTERS, 1996, 69 (03) : 412 - 414
  • [34] Observation of double cyclotron resonance in modulation-delta-doped In0.52Al0.48As/In0.53Ga0.47As heterostructure by optical detection
    Chen, YF
    Dai, YT
    Lo, I
    APPLIED PHYSICS LETTERS, 1996, 68 (08) : 1117 - 1119
  • [35] STRUCTURAL, MAGNETOTRANSPORT AND SUBBAND STUDIES OF AN IN0.52AL0.48AS/IN0.53GA0.47AS ONE-SIDE MODULATION-DOPED QUANTUM-WELL
    KIM, TW
    JUNG, M
    SEO, KY
    YOO, KH
    LEE, JY
    LEE, SJ
    SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 1994, 9 (08) : 1470 - 1473
  • [36] FREE-CARRIER PLASMA AND OPTICAL AMPLIFICATION IN UNDOPED AND MODULATION-DOPED GA0.47IN0.53AS/AL0.48IN0.52AS MULTIPLE-QUANTUM-WELL STRUCTURES
    MORO, C
    FERRARA, M
    CINGOLANI, R
    ZHANG, YH
    PLOOG, K
    JOURNAL OF APPLIED PHYSICS, 1991, 70 (07) : 3821 - 3828
  • [37] VERY LOW RESISTANCE AU/GE/NI/AG BASED OHMIC CONTACT FORMATION TO AL0.25/GA0.75AS/GAAS AND AL0.48IN0.52AS/GA0.47IN0.53AS HETEROSTRUCTURES - A BEHAVIORAL-COMPARISON
    ZWICKNAGL, P
    MUKHERJEE, SD
    CAPANI, PM
    LEE, H
    GRIEM, HT
    RATHBUN, L
    BERRY, JD
    JONES, WL
    EASTMAN, LF
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1986, 4 (02): : 476 - 484
  • [38] Characteristics of fully quaternary In0.52(Al0.8Ga0.2)0.48As/In0.53(Al0.2Ga0.8)0.47As heterostructures in doped-channel FETs
    Lai, LS
    Chan, YJ
    Pan, JW
    Chyi, JI
    ELECTRONICS LETTERS, 1998, 34 (03) : 308 - 309
  • [39] INVESTIGATION OF ELECTRONIC-PROPERTIES OF 2DEG SYSTEMS IN MODULATION-DOPED INXGA1-XAS/IN0.52AL0.48AS (0.53-LESS-THAN-X-LESS-THAN-0.65) AND DELTA-DOPED IN0.53GA0.47AS
    HONG, WP
    DEROSA, F
    BHAT, R
    ALLEN, SJ
    HAYES, JR
    BHATTACHARYA, P
    INSTITUTE OF PHYSICS CONFERENCE SERIES <D>, 1989, (96): : 237 - 242
  • [40] INVESTIGATION OF ELECTRONIC-PROPERTIES OF 2DEG SYSTEMS IN MODULATION-DOPED INXGA1-XAS/IN0.52AL0.48AS (0.53-LESS-THAN-X-LESS-THAN-0.65) AND DELTA-DOPED IN0.53GA0.47AS
    HONG, WP
    DEROSA, F
    BHAT, R
    ALLEN, SJ
    HAYES, JR
    BHATTACHARYA, P
    GALLIUM ARSENIDE AND RELATED COMPOUNDS 1988, 1989, : 237 - 242
12345