2ND SUBBAND POPULATION IN DELTA-DOPED AL0.48IN0.52AS/GA(0.47)IN(0.5)3AS HETEROSTRUCTURES

被引：30
|
作者：
LO, I
MITCHEL, WC
AHOUJJA, M
CHENG, JP
FATHIMULLA, A
MIER, H
机构：
[1] WRIGHT LAB,MAT DIRECTORATE,WRIGHT PATTERSON AFB,OH 45433
[2] MIT,FRANCIS BITTER NATL MAGNET LAB,CAMBRIDGE,MA 02139
来源：
APPLIED PHYSICS LETTERS | 1995年 / 66卷 / 06期
关键词：
D O I：
10.1063/1.114083
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
We have observed the population of the second two-dimensional electron subband in δ-doped Al0.48In0.52As/Ga0.47In0.53As heterostructures by Shubnikov-de Haas measurements. After illuminating the samples at low temperature, the electron density increases from 17.3 to 18.2×1011 cm-2 for the first subband and from 3.6 to 4.1×1011 cm-2 for the second subband. The population of the second subband begins when the first subband is filled at a density of 10.3×1011 cm-2. The effective mass of the second subband is equal to (0.045±0.003)m0, indicating significant band nonparabolicity in the Ga0.47In0.53As well.© 1995 American Institute of Physics.
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页码：754 / 756
页数：3
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