THE EINSTEIN RELATION FOR DEGENERATE SEMICONDUCTORS WITH NONUNIFORM BAND STRUCTURES

被引：18
|
作者：
MOHAMMAD, SN
BEMIS, AV
机构：
[1] SUNY COLL NEW PALTZ,DEPT ELECT ENGN,NEW PALTZ,NY 12561
[2] IBM CORP,CTR E FISHKILL PROD ASSURANCE & TESTING,HOPEWELL JCT,NY 12533
来源：
IEEE TRANSACTIONS ON ELECTRON DEVICES | 1992年 / 39卷 / 12期
关键词：
D O I：
10.1109/16.168739
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Modification of the Einstein equation for semiconductors with nonparabolic energy bands and doped nonuniformly with impurity atoms is suggested. The suggestion is based on a new approximation of the Fermi-Dirac integral of order 1/2, viz., F1/2(eta(n)), where eta(n), is the reduced Fermi level for electrons. The new relation reduces to that for semiconductors with parabolic energy bands and doped uniformly with impurity atoms under appropriate boundary conditions. A comparison of the calculated and exact results for F1/2(eta) is found to be very encouraging.
引用
收藏
页码：2826 / 2828
页数：3
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