THE INFLUENCE OF TEMPERATURE-FLUCTUATIONS ON MELT GROWTH OF ANTIMONY SULFOIODIDE

被引：1
作者：
PALANIAPPAN, L
GNANAM, FD
RAMASAMY, P
机构：
[1] Anna Univ, Madras, India, Anna Univ, Madras, India
来源：
MATERIALS CHEMISTRY AND PHYSICS | 1986年 / 14卷 / 05期
关键词：
ANTIMONY COMPOUNDS - Crystallization - CRYSTALS - Structure - FERROELECTRIC MATERIALS - Manufacture;
D O I：
10.1016/0254-0584(86)90052-0
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
The ferroelectric semiconductor SbSI is intensively studied because of its Curie temperature of 22 degree C. The temperature fluctuation method is reported for the growth of SbSI as a single bundle of very closely packed parallel thick needles, the needles being parallel to the axis of the growth vessel. Crystal bundles have also been grown without temperature fluctuations. The growth habits of SbSI crystals grown by these two methods have been compared.
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页码：495 / 499
页数：5
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