DEFECT STUDIES IN ELECTRON-IRRADIATED BORON-DOPED SILICON

被引：5
作者：
LONDOS, CA [1 ]
BANBURY, PC [1 ]
机构：
[1] UNIV READING,JJ THOMSON PHYS LAB,READING RG6 2AF,BERKS,ENGLAND
来源：
JOURNAL OF PHYSICS C-SOLID STATE PHYSICS | 1987年 / 20卷 / 05期
关键词：
D O I：
10.1088/0022-3719/20/5/003
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
引用
收藏
页码：645 / 650
页数：6
相关论文
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    [J]. PHYSICA B & C, 1983, 116 (1-3): : 230 - 235
  • [7] INTERSTITIAL BORON IN SILICON - A NEGATIVE-U SYSTEM
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    [J]. PHYSICAL REVIEW B, 1980, 22 (02): : 921 - 931
  • [8] DEFECTS IN IRRADIATED SILICON - EPR AND ELECTRON-NUCLEAR DOUBLE-RESONANCE OF INTERSTITIAL BORON
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  • [9] [No title captured]
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