MONOLITHICALLY INTEGRATED 1 X 12 ARRAY OF PLANAR INGAAS/INP PHOTODIODES

被引：9
|
作者：
BROWN, MG
HU, PHS
KAPLAN, DR
OTA, Y
SEABURY, CW
WASHINGTON, MA
BECKER, EE
JOHNSON, JG
KOZA, M
POTOPOWICZ, JR
机构：
来源：
JOURNAL OF LIGHTWAVE TECHNOLOGY | 1986年 / 4卷 / 03期
关键词：
D O I：
10.1109/JLT.1986.1074707
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
收藏
页码：283 / 287
页数：5
相关论文
共 50 条
  • [1] Uniform and high performance of monolithically integrated 1 x 12 array of planar GaInAs photodiodes
    Ho, WJ
    Wu, MC
    Tu, YK
    IEEE TRANSACTIONS ON ELECTRON DEVICES, 1997, 44 (04) : 559 - 564
  • [2] MONOLITHICALLY INTEGRATED TRANSIMPEDANCE OPTICAL RECEIVER IN A PLANAR INGAAS/INP TECHNOLOGY
    ROMER, D
    LAUTERBACH, C
    HOFFMANN, L
    EBBINGHAUS, G
    GALLIUM ARSENIDE AND RELATED COMPOUNDS 1993, 1994, 136 (136): : 313 - 318
  • [3] INP/INGAASP/INGAAS PLANAR AVALANCHE PHOTODIODES
    MIKAWA, T
    KANEDA, T
    NAKAJIMA, K
    JAPAN ANNUAL REVIEWS IN ELECTRONICS COMPUTERS & TELECOMMUNICATIONS, 1984, 11 : 68 - 83
  • [4] Highly uniform monolithic 1x12 array of InGaAs photodiodes
    Ho, WJ
    Wu, MC
    Dai, TA
    Lin, W
    Tu, YK
    ELECTRONICS LETTERS, 1996, 32 (01) : 61 - 62
  • [5] Investigation of planar photodiodes of a focal plane array based on a heteroepitaxial InGaAs/InP structure
    Andreev, D. S.
    Boltar, K. O.
    Vlasov, P. V.
    Irodov, N. A.
    Lopuhin, A. A.
    JOURNAL OF COMMUNICATIONS TECHNOLOGY AND ELECTRONICS, 2016, 61 (10) : 1220 - 1225
  • [6] Investigation of planar photodiodes of a focal plane array based on a heteroepitaxial InGaAs/InP structure
    D. S. Andreev
    K. O. Boltar
    P. V. Vlasov
    N. A. Irodov
    A. A. Lopuhin
    Journal of Communications Technology and Electronics, 2016, 61 : 1220 - 1225
  • [7] Photoresponse uniformity in planar InP/InGaAs avalanche photodiodes
    Walker, A. W.
    Pitts, O. J.
    2021 INTERNATIONAL CONFERENCE ON NUMERICAL SIMULATION OF OPTOELECTRONIC DEVICES (NUSOD), 2021, : 41 - 42
  • [8] Planar photodiodes FPA of heteroepitaxial structure InGaAs/InP
    Orion RandP Association, 46/2 Enthusiasts highway, Moscow, 111123, Russia
    Appl. Phys., 1 (47-52):
  • [9] HIGH BANDWIDTH PLANAR INP/INGAAS AVALANCHE PHOTODIODES
    EKHOLM, DT
    GEARY, JM
    HOLLENHORST, JN
    MATTERA, VD
    PAWELEK, R
    IEEE TRANSACTIONS ON ELECTRON DEVICES, 1988, 35 (12) : 2434 - 2434
  • [10] MONOLITHICALLY INTEGRATED INGAAS/INP PIN-JFET PHOTORECEIVER
    WAKE, D
    SCOTT, EG
    HENNING, ID
    ELECTRONICS LETTERS, 1986, 22 (13) : 719 - 721
12345