RAMAN-STUDY OF DISORDER AND STRAIN IN EPITAXIAL ZNSXSE1-X FILMS ON A GAAS SUBSTRATE

被引：15
作者：
KANEMITSU, Y [1 ]
YAMAMOTO, A [1 ]
MATSUE, H [1 ]
MASUMOTO, Y [1 ]
YAMAGA, S [1 ]
YOSHIKAWA, A [1 ]
机构：
[1] CHIBA UNIV,DEPT ELECT & ELECTR ENGN,CHIBA 260,JAPAN
来源：
APPLIED PHYSICS LETTERS | 1992年 / 60卷 / 11期
关键词：
D O I：
10.1063/1.107333
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Quantitative characterization of disorder and strain in ZnSxSe1-x/GaAs lattice-mismatched semiconductor heterostructures was successfully done by means of Raman spectroscopy. The alloy disorder and the phonon coherence length in epitaxial ZnSxSe1-x films were estimated from the Raman linewidth of the ZnSe-like LO phonon by using a spatial correlation model. The strain due to the lattice mismatch near the interface between ZnSxSe1-x and GaAs was deduced from the linewidth of the GaAs LO phonon.
引用
收藏
页码：1330 / 1332
页数：3
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