LOW-FREQUENCY NOISE IN GAAS

被引：1

作者：

YANG, S

MIZUNAMI, T

TAKAGI, K

机构：

[1] Department of Electronics, Kyushu Institute of Technology

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1990年 / 29卷 / 07期

关键词：

1/f; GaAs; Generation-recombination; Low-frequency; Noise;

D O I：

10.1143/JJAP.29.1250

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Low-frequency noise measurements were carried out on GaAs devices in the frequency and temperature ranges from 10 Hz to 100 kHz, and from 77 K to 300 K, respectively. The noise spectra are considered to be superpositions of generation-recombination noise components caused by traps. The activation energies of these traps are determined from the temperature dependence of the noise. © 1990 The Japan Society of Applied Physics.

引用

页码：1250 / 1251

页数：2

共 5 条

[1]

IRIE H, 1988, EMCJ8892 I EL INF CO, P35

[2] GENERATION-RECOMBINATION NOISE IN THE SATURATION REGIME OF MODFET STRUCTURES [J].