CARRIER INJECTION AND BACKGATING EFFECT IN GAAS-MESFETS

被引：74
作者：
LEE, CP
LEE, SJ
WELCH, BM
机构：
来源：
ELECTRON DEVICE LETTERS | 1982年 / 3卷 / 04期
关键词：
D O I：
10.1109/EDL.1982.25493
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
收藏
页码：97 / 98
页数：2
相关论文
共 12 条
[1]   DEEP TRAPPING EFFECTS AT GAAS-GAAS-CR INTERFACE IN GAAS FET STRUCTURES [J].
HOUNG, YM ;
PEARSON, GL .
JOURNAL OF APPLIED PHYSICS, 1978, 49 (06) :3348-3352
[2]  
HOWER PL, 1968, I PHYSICS C SER, V7
[3]   STABILITY OF PERFORMANCE AND INTERFACIAL PROBLEMS IN GAAS-MESFETS [J].
ITOH, T ;
YANAI, H .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1980, 27 (06) :1037-1045
[4]  
ITOH T, 1978, I PHYS C SER, V45, P326
[5]   ELECTRICAL AND PHOTOELECTRONIC PROPERTIES OF CR-DOPED SEMI-INSULATING GAAS [J].
KITAHARA, K ;
NAKAI, K ;
SHIBATOMI, A ;
OHKAWA, S .
JOURNAL OF APPLIED PHYSICS, 1979, 50 (08) :5339-5344
[6]  
KOCOT C, COMMUNICATION
[7]  
Lampert M., 1970, CURRENT INJECTIONS S
[8]   TEMPERATURE EFFECT ON LOW THRESHOLD VOLTAGE ION-IMPLANTED GAAS-MESFETS [J].
LEE, SJ ;
LEE, CP .
ELECTRONICS LETTERS, 1981, 17 (20) :760-761
[9]  
Rose A, 1963, CONCEPTS PHOTOCONDUC
[10]   SUBSTRATE AND INTERFACE EFFECTS IN GAAS FETS [J].
TRANDUC, H ;
ROSSEL, P ;
GRAFFEUIL, J ;
AZIZI, C ;
NUZILLAT, G ;
BERT, G .
REVUE DE PHYSIQUE APPLIQUEE, 1978, 13 (12) :655-659
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