COMPARISON OF DC AND AC STRESS FOR A NMOS TRANSISTOR

被引：0
|
作者：
WANG, H [1 ]
KAUL, R [1 ]
BIBYK, SB [1 ]
机构：
[1] OHIO STATE UNIV,DEPT ELECT ENGN,SOLID STATE MICROELECTR LAB,COLUMBUS,OH 43210
来源：
JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1988年 / 135卷 / 08期
关键词：
D O I：
暂无
中图分类号：
O646 [电化学、电解、磁化学];
学科分类号：
081704 ;
摘要：
引用
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页码：C361 / C361
页数：1
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