DENSITY OF STATES OF HIGHLY IMPURE SEMICONDUCTOR

被引：69
作者：
EDWARDS, SF
GULYAEV, YB
机构：
来源：
PROCEEDINGS OF THE PHYSICAL SOCIETY OF LONDON | 1964年 / 83卷 / 5333期
关键词：
D O I：
10.1088/0370-1328/83/3/117
中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
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页码：495 / &
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