RAPID THERMAL ANNEALING OF DUAL SI AND P IMPLANTS IN INP

被引：16

作者：

DODABALAPUR, A

STREETMAN, BG

机构：

来源：

JOURNAL OF ELECTRONIC MATERIALS | 1989年 / 18卷 / 01期

关键词：

D O I：

10.1007/BF02655346

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：65 / 68

页数：4

共 18 条

[1] TEMPERATURE RESPONSE OF GAAS IN A RAPID THERMAL ANNEALING SYSTEM [J].

BLOCK, TR ;

FARLEY, CW ;

STREETMAN, BG .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1986, 133 (02) :450-451

[2]

CHOUDHURY ANMM, 1987, APPL PHYS LETT, V50, P448, DOI 10.1063/1.98170

[3]

DODABALAPUR A, 1987, J ELECTRON MATER, V16, P28383

[4] TYPE CONVERSION IN CLOSE CONTACT RAPID THERMAL ANNEALING OF SI-IMPLANTED INP [J].

FARLEY, CW ;

STREETMAN, BG .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1987, 134 (02) :498-499

[5] COIMPLANTATION AND AUTOCOMPENSATION IN CLOSE CONTACT RAPID THERMAL ANNEALING OF SI-IMPLANTED GAAS-CR [J].

FARLEY, CW ;

KIM, TS ;

STREETMAN, BG .

JOURNAL OF ELECTRONIC MATERIALS, 1987, 16 (01) :79-85

[6] INDIUM-PHOSPHIDE SOLAR-CELLS MADE BY ION-IMPLANTATION [J].

KEAVNEY, CJ ;

SPITZER, MB .

APPLIED PHYSICS LETTERS, 1988, 52 (17) :1439-1440

[7] GROWTH AND RAPID THERMAL ANNEALING OF ALGAAS/INGAAS PSEUDOMORPHIC MODULATION-DOPED STRUCTURES [J].

KESAN, VP ;

DODABALAPUR, A ;

NEIKIRK, DP ;

STREETMAN, BG .

APPLIED PHYSICS LETTERS, 1988, 53 (08) :681-683

[8] INTEGRATED AMPLIFIERS USING FULLY ION-IMPLANTED INP JFETS WITH HIGH TRANSCONDUCTANCE [J].

KIM, SJ ;

GUTH, G ;

VELLACOLEIRO, GP .

IEEE ELECTRON DEVICE LETTERS, 1988, 9 (06) :306-308

[9]

KRAUTLE H, 1988, J APPL PHYS, V63, P4418, DOI 10.1063/1.340186

[10]

Kroger F. A., 1974, CHEM IMPERFECT CRYST, V2

← 1 2 →