Gain and Threshold Current in Type II In(As) Sb Mid-Infrared Quantum Dot Lasers

被引：7

作者：

Lu, Qi ^{[1
]}

Zhuang, Qiandong ^{[1
]}

Krier, Anthony ^{[1
]}

机构：

[1] Univ Lancaster, Phys Dept, Lancaster LA1 4YB, England

来源：

PHOTONICS | 2015年 / 2卷 / 02期

关键词：

quantum dots; mid-infrared; semiconductor lasers;

D O I：

10.3390/photonics2020414

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

In this work, we improved the performance of mid-infrared type II InSb/InAs quantum dot (QD) laser diodes by incorporating a lattice-matched p-InAsSbP cladding layer. The resulting devices exhibited emission around 3.1 mu m and operated up to 120 K in pulsed mode, which is the highest working temperature for this type of QD laser. The modal gain was estimated to be 2.9 cm(-1) per QD layer. A large blue shift (similar to 150 nm) was observed in the spontaneous emission spectrum below threshold due to charging effects. Because of the QD size distribution, only a small fraction of QDs achieve threshold at the same injection level at 4 K. Carrier leakage from the waveguide into the cladding layers was found to be the main reason for the high threshold current at higher temperatures.

引用

页码：414 / 425

页数：12

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