CHARGE-INJECTION IMAGING - OPERATING TECHNIQUES AND PERFORMANCES CHARACTERISTICS

被引：18

作者：

BURKE, HK ^{[1
]}

MICHON, GJ ^{[1
]}

机构：

[1] GE,CORPORATE RES & DEV CTR,SCHENECTADY,NY 12301

来源：

IEEE JOURNAL OF SOLID-STATE CIRCUITS | 1976年 / 11卷 / 01期

关键词：

D O I：

10.1109/JSSC.1976.1050686

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：121 / 128

页数：8

共 11 条

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[5] SURFACE RECOMBINATION IN SEMICONDUCTORS [J].

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[6]

Grove A S, 1967, PHYS TECHNOLOGY SEMI

[7]

MICHON GJ, 1975, P S CHARGE COUPLED D, P106

[8]

MICHON GJ, 1973, INT SOLID STATE CIRC, P138

[9]

MICHON GJ, 1974, ISSCC DIG TECH PAPER, P26

[10] NOISE MEASUREMENTS IN CHARGE-COUPLED-DEVICES [J].

MOHSEN, AM ;

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