MATERIAL REACTION AND SILICIDE FORMATION AT THE REFRACTORY-METAL SILICON INTERFACE

被引：40
作者：
RUBLOFF, GW [1 ]
TROMP, RM [1 ]
VANLOENEN, EJ [1 ]
机构：
[1] INST ATOM & MOLEC PHYS,1098 SJ AMSTERDAM,NETHERLANDS
来源：
APPLIED PHYSICS LETTERS | 1986年 / 48卷 / 23期
关键词：
D O I：
10.1063/1.96829
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
引用
收藏
页码：1600 / 1602
页数：3
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