The Lattice Compatibility Theory LCT: Physical and Chemical Arguments from the Growth Behavior of Doped Compounds in terms of Bandgap Distortion and Magnetic Effects

被引:4
作者
Boubaker, K. [1 ]
机构
[1] Univ Tunis, 63 Rue Sidi Jabeur, Mahdia 5100, Tunisia
来源
ADVANCES IN PHYSICAL CHEMISTRY | 2013年
关键词
D O I
10.1155/2013/578686
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
Physical and chemical arguments for the recently discussed materials-related Lattice Compatibility Theory are presented. The discussed arguments are based on some differences of Mn ions incorporation kinetics inside some compounds. These differences have been evaluated and quantified in terms of alteration of bandgap edges, magnetic patterns, and Faraday effect.
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页数:5
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