OPTICALLY TRANSPARENT ITO EMITTER CONTACTS IN THE FABRICATION OF INP/INGAAS HPTS

被引:22
作者
BASHAR, SA
REZAZADEH, AA
机构
[1] Centre for Optics and Electronics, Department of Electronic and Electrical Engineering, King's College, University of London
关键词
D O I
10.1109/22.414581
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
An optically transparent emitter InP/InGaAs heterojunction phototransistor (HPT) fabricated using Indium Tin Oxide (ITO) as the ohmic contact is presented for the first time; these devices show similar electrical characteristics to their opaque emitter counterparts and enhanced optical responsivities (5.4 A/W at 780 nm wavelength). Measured spectral response suggests responsivities of up to 30 A/W and 22 A/W at lambda = 1310 nm and 1550 nm respectively.
引用
收藏
页码:2299 / 2303
页数:5
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