A HIGH-POWER, LOW-CONTAMINATION LASER-PLASMA SOURCE FOR EXTREME UV LITHOGRAPHY

被引：7
作者：
BIJKERK, F
SHMAENOK, LA
SHEVELKO, AP
BASTIAENSEN, RKFJ
BRUINEMAN, C
VANHONK, AGJR
机构：
[1] FOM-Institute for Plasma Physics Rijnhuizen, 3439 MN Nieuwegein
[2] Lebedev Physical Institute, 117924 Moscow, Leninsky Prospekt 53
来源：
MICROELECTRONIC ENGINEERING | 1995年 / 27卷 / 1-4期
关键词：
LASER PLASMA EUV SOURCE; EUV SPECTRA; MITIGATION OF PLASMA DEBRIS;
D O I：
10.1016/0167-9317(94)00111-7
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Experimental results are reported on the development of a low-contamination laser-plasma source for extreme ultra-violet lithography (EUVL). The results concern the intensity in the 12.5 to 15.5 nm wavelength range and the pollution of EUV optics by plasma debris.
引用
收藏
页码：299 / 301
页数：3
相关论文
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