RAMP RECOVERY IN P-I-N-DIODES - GENERAL MATHEMATICAL FORMULATION AND COMPARISON WITH OTHER METHODS OF LIFETIME MEASUREMENT

被引：5

作者：

DHARIWAL, SR ^{[1
]}

SHARMA, RC ^{[1
]}

机构：

[1] LM COLL SCI,DEPT PHYS,JODHPUR 342003,INDIA

来源：

SOLID-STATE ELECTRONICS | 1992年 / 35卷 / 11期

关键词：

D O I：

10.1016/0038-1101(92)90197-K

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Mathematical expressions have been obtained for the ramp recovery of a p-i-n diode, The result obtained allows estimate of relative magnitudes of the modes of recovery and gives Berz's results after suitable modifications. Expressions have been obtained for the open-circuit voltage decay and the step recovery enabling comparison of these methods with the ramp recovery. Approximate results for slow ramps have been obtained providing simple formulae for the interpretation of experimental results. Fractional charge left at the end of first phase of recovery has also been calculated for this case.

引用

页码：1675 / 1682

页数：8

共 11 条

[1]

[Anonymous], 1996, TABLES INTEGRALS SER

[2] RAMP RECOVERY IN P-I-N-DIODES [J].