ISOVALENT GALLIUM AND ARSENIC IMPURITY DOPING OF INP GROWN BY LIQUID-PHASE EPITAXY

被引：0

作者：

PYSHNAYA, NB ^{[1
]}

RADAUTSAN, SI ^{[1
]}

CHUMAK, VA ^{[1
]}

CHALDYSHEV, VV ^{[1
]}

SHMARTSEV, YV ^{[1
]}

机构：

[1] AF IOFFE PHYS TECH INST,ST PETERSBURG 194021,MOLDOVA

来源：

SOVIET PHYSICS SEMICONDUCTORS-USSR | 1992年 / 26卷 / 10期

关键词：

D O I：

暂无

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

The effect of isovalent gallium and arsenic impurity doping on the electrical properties and photoluminescence of InP films grown by liquid phase epitaxy has been studied. The results were compared with those obtained earlier for LPE-grown GaAs films doped with isovalent impurities of groups V and III. The conclusion is that the variations of shallow- and deep-level concentrations in the III-V compounds by isovalent impurity doping are similar.

引用

页码：972 / 974

页数：3

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