ON THE SENSITIVITY OF TRANSIENT PHOTODECAY MEASUREMENTS AS A PROBE OF LOCALIZED STATE DISTRIBUTIONS IN AMORPHOUS-SEMICONDUCTORS

被引：30
作者：
MARSHALL, JM [1 ]
STREET, RA [1 ]
机构：
[1] XEROX CORP,PALO ALTO RES CTR,PALO ALTO,CA 94304
来源：
SOLID STATE COMMUNICATIONS | 1984年 / 50卷 / 02期
关键词：
D O I：
10.1016/0038-1098(84)90914-1
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
引用
收藏
页码：91 / 95
页数：5
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