PROPERTIES OF AU-ZN OHMIC CONTACTS TO P-GASB

被引：13
|
作者：
OLIVEIRA, JBB
OLIVIERI, CA
GALZERANI, JC
PASA, AA
DEPRINCE, FC
机构：
[1] UNIV FED RIO DE JANEIRO,COPPE,PEMM,LEMI,BR-21945 RIO DE JANEIRO,BRAZIL
[2] UNIV ESTADUAL CAMPINAS,INST FIS,BR-13081 CAMPINAS,SP,BRAZIL
来源：
JOURNAL OF APPLIED PHYSICS | 1989年 / 66卷 / 11期
关键词：
D O I：
10.1063/1.343699
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
引用
收藏
页码：5484 / 5487
页数：4
相关论文
共 50 条
  • [1] Au and Au-Zn contacts on p-GaSb and the characteristics of the interfaces
    Galzerani, J.C.
    Oyama, A.M.
    Pizani, P.S.
    Landers, R.
    Morelhao, S.L.
    Cardoso, L.P.
    Materials science & engineering. B, Solid-state materials for advanced technology, 1993, B20 (03): : 328 - 331
  • [2] AU AND AU-ZN CONTACTS ON P-GASB AND THE CHARACTERISTICS OF THE INTERFACES
    GALZERANI, JC
    OYAMA, AM
    PIZANI, PS
    LANDERS, R
    MORELHAO, SL
    CARDOSO, LP
    MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 1993, 20 (03): : 328 - 331
  • [3] SPECIFIC CONTACT RESISTANCE FOR AU-ZN CONTACTS ON P-GASB
    DEOLIVEIRA, JBB
    DEPRINCE, FC
    FREIRE, JD
    GALZERANI, JC
    JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1987, 134 (03) : C117 - C117
  • [4] OHMIC CONTACTS OF AU AND AG TO P-GASB
    MILNES, AG
    YE, M
    STAM, M
    SOLID-STATE ELECTRONICS, 1994, 37 (01) : 37 - 44
  • [5] TECHNOLOGICAL ASPECTS OF THE PREPARATION OF AU-ZN OHMIC CONTACTS TO P-TYPE INP
    MALINA, V
    SCHADE, U
    VOGEL, K
    SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 1994, 9 (01) : 49 - 53
  • [6] Non-annealed ohmic contacts to p-GaSb grown by molecular beam epitaxy
    Vogt, A
    Simon, A
    Weber, J
    Hartnagel, HL
    Schikora, J
    Buschmann, V
    Fuess, H
    MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 1999, 66 (1-3): : 199 - 202
  • [7] EFFECT OF DEPOSITION PARAMETERS ON THE ELECTRICAL AND METALLURGICAL PROPERTIES OF AU-ZN CONTACTS TO P-TYPE INP
    MALINA, V
    MICHELI, V
    KOHOUT, J
    BERKOVA, D
    SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 1994, 9 (08) : 1523 - 1528
  • [8] OHMIC CONTACTS TO P-GAAS WITH AU-ZN-AU STRUCTURE
    SANADA, T
    WADA, O
    JAPANESE JOURNAL OF APPLIED PHYSICS, 1980, 19 (08) : L491 - L494
  • [9] Improved Au/Zn/Au Ohmic contacts for p-type InP?
    Mang Kefeng
    Tang Hengjing
    Wu Xiaoli
    Xu Jintong
    Li Xue
    Gong Haimei
    INTERNATIONAL SYMPOSIUM ON PHOTOELECTRONIC DETECTION AND IMAGING 2007: PHOTOELECTRONIC IMAGING AND DETECTION, 2008, 6621
  • [10] AU-ZN/AU-SB/GAP OHMIC CONTACT OF GAP LED
    LU, ZH
    HUA, WM
    DING, ZC
    JOURNAL OF LUMINESCENCE, 1988, 40-1 : 806 - 807
12345